Optical properties of δ-doped doping superlatticesSCHUBERT, E. F.Surface science. 1990, Vol 228, Num 1-3, pp 240-246, issn 0039-6028Conference Paper

The δ-doped field-effect transistorSCHUBERT, E. F; PLOOG, K.Japanese journal of applied physics. 1985, Vol 24, Num 8, pp L608-L610, issn 0021-4922Article

Interpretation of capacitance-voltage profiles from delta-doped GaAs grown by molecular beam epitaxySCHUBERT, E. F; PLOOG, K.Japanese journal of applied physics. 1986, Vol 25, Num 7, pp 966-970, issn 0021-4922, 1Article

Electron subband structure in selectively doped n-Al_xGa_1-xAs/GaAs heterostructuresSCHUBERT, E. F; PLOOG, K.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1868-1873, issn 0018-9383Article

Transient photoconductivity in selectively doped n-type Al_xGa_1-xAs/GaAs heterostructuresSCHUBERT, E. F; PLOOG, K.Physical review. B, Condensed matter. 1984, Vol 29, Num 8, pp 4562-4569, issn 0163-1829Article

Junction-temperature measurements in GaN UV light-emitting diodes using the diode forward voltageXI, Y; SCHUBERT, E. F.IEEE Lester Eastman conference on high performance devices. 2004, pp 84-89, isbn 981-256-196-X, 1Vol, 6 p.Conference Paper

Electron-impurity tunneling in selectivity doped n-type Al_xGa_1-xAs/GaAs heterostructuresSCHUBERT, E. F; PLOOG, K.Physical review. B, Condensed matter. 1985, Vol 31, Num 12, pp 7937-7946, issn 0163-1829Article

Free and bound excitons and the effect of alloy disorder in MBE grown Al_xGa_1-xAsSCHUBERT, E. F; PLOOG, K.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 23, pp 4549-4559, issn 0022-3719Article

Interpretation of capacitance-voltage profiles from delta-doped GaAs grown by molecular beam epitaxySCHUBERT, E. F; PLOOG, K.Japanese journal of applied physics. 1986, Vol 25, Num 7, pp 966-970, issn 0021-4922, 1Article

Shallow and deep donors in direct-gap n-type Al_xGa_1―xAs:Si grown by molecular-beam epitaxySCHUBERT, E. F; PLOOG, K.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7021-7029, issn 0163-1829Article

Flat free-standing silicon diaphragms using silicon-on-insulator wafersGRAFF, J. W; SCHUBERT, E. F.Sensors and actuators. A, Physical. 2000, Vol 84, Num 3, pp 276-279, issn 0924-4247Article

GaAs saw-tooth superlattice light-emitting diode operating monochromatically at λ≥0.9 μmSCHUBERT, E. F; FISCHER, A; PLOOG, K et al.Electronics Letters. 1985, Vol 21, Num 9, pp 411-412, issn 0013-5194Article

Reduction of surface roughness in photoenhanced electrochemical wet-etched GaNSTOCKER, D. A; SCHUBERT, E. F.Journal of the Electrochemical Society. 1999, Vol 146, Num 7, pp 2702-2704, issn 0013-4651Article

Photonic switching by tunnelling-assisted absorption modulation in a GaAs sawtooth structureSCHUBERT, E. F; CUNNINGHAM, J. E.Electronics Letters. 1988, Vol 24, Num 15, pp 980-982, issn 0013-5194Article

Radiative electron-hole recombination in a new sawtooth semiconductor superlattice grown by molecular-beam epitaxySCHUBERT, E. F; HORIKOSHI, Y; PLOOG, K et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 2, pp 1085-1089, issn 0163-1829Article

15 000 hrs stable operation of resonant cavity light emitting diodesSCHUBERT, E. F; HUNT, N. E. J.Applied physics. A, Materials science & processing (Print). 1998, Vol 66, Num 3, pp 319-321, issn 0947-8396Article

Delta doping in siliconGOSSMANN, H.-J; SCHUBERT, E. F.Critical reviews in solid state and materials sciences. 1993, Vol 18, Num 1, pp 1-67, issn 1040-8436Article

Transient and persistent photoconductivity in n-Al_xGa_1-xAs and selectivity doped n-Al_xGa_1-xAs/GaAs heterostructuresSCHUBERT, E. F; KNECHT, J; PLOOG, K et al.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 9, pp L215-L221, issn 0022-3719Article

Photoconductivity in selectively n- and p-doped Al_xGa_1-x/GaAs heterostructuresSCHUBERT, E. F; FISCHER, A; PLOOG, K et al.Solid-state electronics. 1986, Vol 29, Num 2, pp 173-180, issn 0038-1101Article

Extremely high quality Ga_0.47In_0.53As/InP quantum wells grown by chemical beam epitaxyTSANG, W. T; SCHUBERT, E. F.Applied physics letters. 1986, Vol 49, Num 4, pp 220-222, issn 0003-6951Article

The delta-doped field-effect transistor (δFET)SCHUBERT, E. F; FISCHER, A; PLOOG, K et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 5, pp 625-632, issn 0018-9383Article

Pseudomorphic growth of thick n-type Al_xGa_1-xN layers on low-defect-density bulk AIN substrates for UV LED applicationsGRANDUSKY, J. R; SMART, J. A; MENDRICK, M. C et al.Journal of crystal growth. 2009, Vol 311, Num 10, pp 2864-2866, issn 0022-0248, 3 p.Conference Paper

N- and P-type dopant profiles in distributed Bragg reflector structures and their effect on resistanceKOPF, R. F; SCHUBERT, E. F; DOWNEY, S. W et al.Applied physics letters. 1992, Vol 61, Num 15, pp 1820-1822, issn 0003-6951Article

High temperature performance of three-quantum-well vertical-cavity top-emitting lasersTU, L. W; WANG, Y. H; SCHUBERT, E. F et al.Electronics Letters. 1991, Vol 27, Num 5, pp 457-458, issn 0013-5194, 2 p.Article

Si dopant migration and the AlGaAs/GaAs inverted interfacePFEIFFER, L; SCHUBERT, E. F; WEST, K. W et al.Applied physics letters. 1991, Vol 58, Num 20, pp 2258-2260, issn 0003-6951, 3 p.Article